51612 tkim tc-00002752/40412 tkim tc-00002745/d0507 tiim tc-00001052/41807qb tiim tc-00000661 no. a0746-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 2sk4124 n-channel power mosfet 500v, 20a, 430m , to-3p-3l stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance, low input capacitance, ultrahigh-speed switching ? adoption of high reliability hvp process ? avalanche resistance guarantee speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 500 v gate-to-source voltage v gss 30 v drain current (dc) i d 20 a drain current (pulse) i dp pw 10 s, duty cycle 1% 60 a allowable power dissipation p d 2.5 w tc=25 c (our ideal heat dissipation condition)*1 170 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 110 mj avalanche current *2 i av 20 a * 1 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made o f aluminium. * 2 v dd =50v, l=500 h, i av =20a (fig.1) * 3 l 500 h, single pulse package dimensions unit : mm (typ) 7539-002 ordering number : ena0746c product & package information ? package : to-3p-3l ? jeita, jedec : sc-65, to-247, sot-199 ? minimum packing quantity : 30 pcs./magazine marking electrical connection k4124 lot no. 1 3 2 1 : gate 2 : drain 3 : source to-3p-3l 15.6 1.5 0.6 2.0 1.0 123 18.4 10.0 16.76 5.45 5.45 3.2 7.0 3.5 5.0 19.9 20.0 3.0 4.8 13.6 1.4 2SK4124-1E
2sk4124 no. a0746-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 500 v zero-gate voltage drain current i dss v ds =400v, v gs =0v 100 a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 3 5 v forward transfer admittance | yfs | v ds =10v, i d =10a 4.9 9.7 s static drain-to-source on-state resistance r ds (on) i d =8a, v gs =10v 0.33 0.43 input capacitance ciss v ds =30v, f=1mhz 1200 pf output capacitance coss 250 pf reverse transfer capacitance crss 55 pf turn-on delay time t d (on) see fig.2 26.5 ns rise time t r 95 ns turn-off delay time t d (off) 145 ns fall time t f 58 ns total gate charge qg v ds =200v, v gs =10v, i d =20a 46.6 nc gate-to-source charge qgs 8.7 nc gate-to-drain ?miller? charge qgd 27.3 nc diode forward voltage v sd i s =20a, v gs =0v 1.0 1.3 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2SK4124-1E to-3p-3l 30pcs./magazine pb free pw=10 s d.c. 0.5% p. g r gs =50 g s d i d =10a r l =20 v dd =200v v out 2sk4124 v in 10v 0v v in 50 50 rg v dd l 10v 0v 2sk4124
2sk4124 no. a0746-3/7 it11732 it11733 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs 0 0 45 40 30 35 25 20 15 10 30 525 15 20 10 5 15v 10v v gs =5v 6v 8v tc=25 c 0 45 30 35 40 25 20 15 10 5 020 18 16 412 210 68 14 v ds =20v tc= --25 c 25 c 75 c drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it11734 it11735 it11737 it11736 it11738 it11739 static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a forward transfer admittance, | y fs | -- s diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- tc i s -- v sd | y fs | -- i d r ds (on) -- v gs 3 0 1.2 1.0 0.6 0.8 15 13 59 711 0.4 0.2 i d =8a tc=75 c 25 c --25 c --50 --25 0 25 50 75 100 125 150 0 1.0 0.4 0.8 0.6 0.2 0.9 0.3 0.7 0.5 0.1 i d =8a, v gs =10v 0.1 23 57 23 1.0 23 5 5 7 10 1.0 10 2 3 5 7 5 7 3 2 3 v ds =10v 75 c 25 c 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 5 3 2 7 5 3 2 2 1.0 7 5 3 25 c --25 c tc=75 c v gs =0v 10 100 3 2 2 5 7 1000 3 5 7 0.1 1.0 23 57 23 5 10 23 5 77 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 10000 7 5 3 2 50 5253545 15 10 30 40 20 f=1mhz ciss coss crss tc= --25 c
2sk4124 no. a0746-4/7 drain-to-source voltage, v ds -- v a s o drain current, i d -- a it12415 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 0 0 1 2 3 4 5 6 7 8 50 40 10 9 10 20 30 v ds =200v i d =20a it16847 0.01 2 3 5 7 2 3 5 7 2 3 5 7 1.0 0.1 0.1 1.0 10 s 100 s 10ms 1ms dc operation 10 100 1000 23 7 10 2 3 5 7 100 i d =20a operation in this area is limited by r ds (on). 5 23 7 5 23 7 5 23 7 5 100ms i dp =60a(pw 10 s) tc=25 c single pulse 0 0 20 40 60 80 100 120 3.0 2.5 140 160 2.0 1.5 1.0 0.5 it12248 0 0 20 40 60 80 100 140 120 100 80 120 140 160 170 180 60 40 20 200 160 it12249 ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w p d -- ta p d -- tc 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c
2sk4124 no. a0746-5/7 magazine speci cation 2SK4124-1E
2sk4124 no. a0746-6/7 outline drawing 2SK4124-1E mass (g) unit 1.8 * for reference mm
2sk4124 ps no. a0746-7/7 note on usage : since the 2sk4124 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
|
